胡达
一、个人简介
胡达，男，汉族，1996年8月出生，广西贺州人，中共党员，博士。
邮箱：huda@glut.edu.cn
二、教育经历
2022.09-2025.06 广东工业大学 机电工程 博士
2019.09-2022.06 广东工业大学 机电工程 硕士
2015.09-2019.06 广西科技大学 机械工程 学士
三、研究方向
半导体晶圆超精密加工，磁流变弹性体抛光技术，化学机械抛光，磁流变抛光，化学机械研磨。
主持科研项目情况：
（1）国家自然科学基金项目，52665055，基于磁流变弹性抛光垫的单晶SiC磁控-电化学机械抛光机理研究，2027.01-2030.12，在研，主持。
参与科研项目情况：
（1）国家自然科学基金面上项目，52475434，单晶SiC磁流变弹性抛光垫磁控柔性去除-芬顿反应协同抛光机理与关键技术, 2025.01-2028.12，在研，参与。
（2）广东省自然科学基金面上项目，2023A1515010923，单晶SiC磁流变弹性抛光垫制备及磁控-异相芬顿反应抛光机理研究，2024.01-2026.12，在研，参与。
（3）广东省重点领域研发计划项目，2024B0101120003，SiC晶锭低损耗高效率激光剥片技术及装备研发，2023.12-2027.12，在研，参与
四、主要科研成果
学术论文
(1) Da Hu, Kexin Liu, Huaian Yi, et al. Structure-property relationship of a magnetorheological elastomer polishing pad for single-crystal SiC and its magnetorheological polishing mechanism. Materials Science in Semiconductor Processing. 2026, 214: 110945.
(2) Da Hu, Kexin Liu, Enchi Xue, et al. Polishing performance of single-crystal SiC with a magnetically controll-fenton reaction magnetorheological elastomer pad. Journal of Environmental Chemical Engineering. 2026, 14: 122143.
(3) Da Hu, Jiabin Lu, Liyun Su, et al. Investigation of the Fenton reaction of CIP@Fe3O4 and its polishing characteristics on single-crystal SiC. Journal of Environmental Chemical Engineering. 2026,14(3): 122828.
(4) Da Hu, Jiabin Lu⁎, Yuhang Jin, et al. Preparation of CIP@Fe3O4 particles and their impact on the Fenton reaction processing performance of single-crystal SiC. Wear. 2024, 558-559(15):205590.
(5) Da Hu, Jiabin Lu⁎, Jiayun Deng, et al. The polishing properties of magnetorheological-elastomer polishing pad based on the heterogeneous Fenton reaction of single-crystal SiC. Precision Engineering. 2023, 79:78-85.
(6) Da Hu, Haotian Long, Jiabin Lu⁎, et al. Preparation and performance study of silicon modified polyurethane-based magnetorheological elastomeric polishing pad. Smart Materials and Structures. 2024, 33:105005.
(7) Da Hu, Haotian Long, Jiabin Lu⁎, et al. Preparation and performance study of microporous magnetorheological elastomer polishing pad. Materials Today Communications. 2024, 41:110980.
(8) Da Hu, Jiabin Lu⁎, Qiusheng Yan, et al. Investigating surface wear characteristics of single-crystal SiC based on metal electrochemical corrosion. Materials Science in Semiconductor Processing. 2024,171:108004.
(9) Da Hu, Jiabin Lu⁎, Qiusheng Yan, et al. Study of catalytic properties and grinding performance of single-crystal SiC heterogeneous Fenton reaction grinding discs. International Journal of Advanced Manufacturing Technology. 2024,133:2551-2563.
(10) Da Hu, Huilong Li, Jiabin Lu⁎, et al. Study on heterogeneous Fenton reaction parameters for polishing single-crystal SiC using magnetorheological elastomers polishing pads. Smart Materials and Structures. 2023.32:025003.
(11) Da Hu, Jiayun Deng, Jiabin Lu⁎, et al. A study of the magneto-controlled mechanical properties and polishing performance for single-crystal SiC used as a magnetorheological-elastomer polishing pad. Smart Materials and Structures. 2022, 31: 35021.
(12) 胡达, 路家斌⁎, 阎秋生, 等. 基于金属电化学腐蚀的单晶SiC表面腐蚀和磨损性能研究. 湖南大学学报，2024，51(04)：123-131.
(13) Jialong Lin, Da Hu, Jiabin Lu⁎, et al. Chemical mechanical polishing on GaN using a developed resin-metal plate through the aluminum contact corrosion. Materials Today Communications. 2025, 42:111533.
(14) Jialong Lin, Da Hu, Xinhan Wang, et al. The influence of Fenton reaction chemical parameters on the removal of single crystal diamond. Diamond and Related Materials. 2025, 153:112040.
(15) Chen Lin, Jiabin Lu, Da Hu, et al. Study on planarization mechanism of multi-interfaces in soft-hard combined polishing plate for single-crystal SiC. CIRP Journal of Manufacturing Science and Technology. 2026, 69: 261-276.
(16) Zirong Huang, Huilong Li, Da Hu, et al. Performance of polishing for silicon carbide using developed silicone-modified polyurethane polishing pads. Materials Science and Engineering: B. 2026, 332:119661.
(17) Wenrui Liang, Huilong Li, Da Hu, et al. Study on the magnetorheological polishing characteristics of silicone-modified polyurethanes based magnetorheological elastomeric polishing pad. Materials Today Communications. 2025, 46,112883.
(18) Junqiang Lin, Qiusheng Yan⁎, Weisong Fang, Da Hu, Tao Wang. Lapping performance of agglomerated diamond abrasives and analysis of sapphire processing process. Precision Engineering. 2024, 89:317-327.
(19) Huilong Li, Jiabin Lu⁎, Weiming Cai, Da Hu, Qiusheng Yan. Optimisation of chemically assisted mechanical polishing process parameters for polycrystalline diamond based on photo-Fenton reaction. Diamond and Related Materials. 2024, 150:111750.
(20) Ziyuan Luo, Jiabin Lu⁎, Qiusheng Yan, Da Hu, Yongze Zhou. Influence of SiO2-ZnO mixed soft abrasive on tribological behavior and polishing performance of sapphire wafer. Materials Science in Semiconductor Processing. 2024, 176:108318.
(21) Zirong Huang, Qiyuan Wu, Huilong Li, Da Hu, Jiabin Lu. Effect of chemical reaction parameters on catalytic performance of Ag@AgCl-based photocatalytic-Fenton hybrid CMP and polishing performance of single-crystal SiC. Materials Science and Engineering: B. 2025, 322: 118672.
(22) Huilong Li, Jiahui Yang, Jiabin Lu, Jiajian Sun, Da Hu, Qiusheng Yan. Study on the process parameters of UV photocatalytic chemical mechanical polishing for single-crystal AlN. Diamond and Related Materials. 2025, 156: 112407.
(23) Yingrong Luo, Qiang Xiong, Jiabin Lu⁎, Qiusheng Yan, Da Hu. Chemical mechanical polishing exploiting metal electrochemical corrosion of single-crystal SiC. Materials Science in Semiconductor Processing. 2022, 152:107067.
(24) 李晖龙，路家斌⁎，胡达，等. 单晶 SiC 磁流变弹性抛光垫的磁控抛光性能研究.密封与润滑，2024：1-12.
(25) 龙浩天，路家斌⁎，胡达，等. 磁流变弹性体制备及其在精密加工应用研究进展. 金刚石与磨料磨具工程，2023，43(02)：18-232.
发明专利
(1) Jiabin Lu, Da Hu, Haotian Long, et al. Magnetorheological-elastomer polishing pad for chemical mechanical polishing of semiconductor wafer, preparation method and application thereof. US 12,083,647 B1 (美国专利授权, 授权日期: 2024.09.10)
(2) Jiabin Lu, Da Hu, Zengquan Hu, et al. A method for chemical mechanical polishing of a SiC wafer based on a magnetorheological elastic metal contact corrosion polishing pad. US 18/986,067 (美国专利授权，授权日期: 2025.4.21)
(3) 胡达，刘珂鑫，薛恩驰，等. 一种半导体晶圆的电化学机械研磨盘/抛光垫的应用. CN202610285539.9. （中国发明专利，申请日期：2026.03.10）
(4) 路家斌，胡达，龙浩天，等 一种用于半导体晶片化学机械抛光的磁流变弹性抛光垫、制备方法及其应用. ZL 2023 1 0946782.7 (中国发明专利授权，授权日期: 2024.01.26)
(5) 路家斌，胡达，胡增权，等. 一种用于SiC晶片化学机械抛光的磁流变弹性金属接触腐蚀抛光垫、制备方法及其应用. ZL 2023 1 1873185.2. (中国发明专利授权, 授权日期: 2024.07.12)
(6) 路家斌，胡达，熊强，等. 一种磁流变弹性体及其制备方法和应用. ZL 2021 1 1058349.7 (中国发明专利授权, 授权日期: 2023.07.07)
(7) Qiang Xiong, Jiabin Lu, Qiusheng Yan, Yinrong Luo, Da Hu. Semiconductor wafer magnetically-controlled grinding and polishing integrated disc and use method therefor. WO/2024/001121. (PCT专利授权，授权日期: 2024.01.04)
(8) 熊强，路家斌，阎秋生，骆应荣，胡达. 一种半导体晶片磁控研磨和抛光一体盘及其使用方法. CN115194564B. (中国发明专利授权, 授权日期: 2023.04.28)
(9) 路家斌，胡达，熊强，等. 一种利用磁流变弹性体控制大尺寸晶片平坦化抛光方法. CN 116803605 A (中国发明专利申请, 申请日期: 2023.09.26)
(10) 路家斌，梁文锐，胡达，等. 一种可改变磨料运动状态的核壳磨料研抛盘、制备方法及其应用. CN 118438342 B (中国发明专利授权, 授权日期: 2025.01.21)
